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Performance Evaluation of Different SRAM Topologies Using 180, 90 and 45 nm Technology
ISSN: en
Publisher: author
Performance Evaluation of Different SRAM Topologies Using 180, 90 and 45 nm Technology
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Abstract
The design of various standard SRAM topologies with different technologies has been designed and tested for delay and power dissipation with respect to the different supply voltages. For this consideration, different topologies viz. 6T, 7T, 8T, 9T and 10T SRAM cells have taken. And these cells are designed using generic process development kit (gpdk) 45, 90 and 180 nm technologies. And all these are tested in cadence tool. The detailed analysis about these cells functionality and their characteristic behavior with the applied parameter of supply voltage is presented. The results of the delay, power dissipation with respect to the Vdd are plotted using MATLAB software. Also their layouts were designed and tabulated their areas. Index Terms—low power, optimization, SRAM design, subthreshold SRAM
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International Category Code (ICC):
ICC-0202
Sadulla Shaik
International Article Address (IAA):
IAA.ZONE/en6814en
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