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Comparison of Thermoelectric Properties of ZnO and ZnSnO Thin Films Grown on Si Substrate by Thermal Evaporation
ISSN: 2791 - 0601
Publisher: author
Comparison of Thermoelectric Properties of ZnO and ZnSnO Thin Films Grown on Si Substrate by Thermal Evaporation
Indexed in
Physics and Astronomy
ARTICLE-FACTOR
1.3
Article Basics Score: 2
Article Transparency Score: 3
Article Operation Score: 3
Article Articles Score: 3
Article Accessibility Score: 3
SUBMIT PAPER ASK QUESTION
International Category Code (ICC):
ICC-1302
Publisher: International Research Alliance For Sustainable Development
International Journal Address (IAA):
IAA.ZONE/2791384480601
eISSN
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2791 - 0601
VALID
ISSN Validator
Abstract
In this manuscript, we compared the thermoelectric properties of ZnO and ZnSnO thin films grown on silicon (100) substrate. We have evaporated Zn and Sn+Zn metal powders were evaporated in vacuum tube furnace alternatively, under same experimental conditions for the growth of ZnO and ZTO respectively. After the deposition, these grown films were cut into pieces and post growth annealed at different annealing temperatures from 600oC to 800oC in the air using programmable muffle furnace. Seebeck and Hall data suggested that ZTO sample shows highest value of Seebeck coefficient, electrical conductivity and power factor as compared to the ZnO samples. It is also observed that the value of Seebeck coefficient showing an increasing trend for both of the samples as we increase the post growth annealing temperature. The higher thermoelectric properties for ZTO are due the presence of Sn atoms in ZnO structure. Tin dopants may generate seconda...
